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200PIN DDR266 Unbuffered SO-DIMM

512MB With 64Mx8 CL2.5

Description

The TS64MSD64V6J is a 64M x 64bits Double Data Rate

SDRAM high-density for DDR266.The TS64MSD64V6J

consists of 8pcs CMOS 64Mx8 bits Double Data Rate

SDRAMs in 66 pin TSOP-II 400mil packages, and a 2048

bits serial EEPROM on a 200-pin printed circuit board.

The TS64MSD64V6J is a Dual In-Line Memory Module

and is intended for mounting into 200-pin edge connector

sockets.

Synchronous design allows precise cycle control with the

use of system clock. Data I/O transactions are possible

on both edges of DQS. Range of operation frequencies,

programmable latencies allow the same device to be

useful for a variety of high bandwidth, high performance

memory system applications.

Features

• Power supply : VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V

• Max clock Freq : 133MHZ.

• Double-data-rate architecture; two data transfers per

clock cycle

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transition with CK transition

• Auto and Self Refresh 7.8us refresh interval.

• Data I/O transactions on both edge of data strobe.

• Edge aligned data output, center aligned data input.

• Serial Presence Detect (SPD) with serial EEPROM

• SSTL-2 compatible inputs and outputs.

• MRS cycle with address key programs.

CAS Latency (Access from column address) : 2.5

Burst Length (2,4,8 )

Data Sequence (Sequential & Interleave)

Placement

PCB:09-1220

Transcend Information Inc.

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Resumo do Conteúdo

Página 1

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 Description The TS64MSD64V6J is a 64M x 64bits Double Data

Página 2

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 SIMPLIFIED TRUTH TABLE (V=Valid, X=Don’t Care, H=Logic Hi

Página 3

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 Serial Presence Detect Specification Serial Presence Detec

Página 4 - CK0,/CK0

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 72 Manufacturing Location T 54 54 53 36 34 4D 5344 36 34

Página 5

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 Dimensions Side Millimeters Inches A 67.60±0.20 2.661±0

Página 6

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 Pinouts: Pin No Pin Name Pin No Pin Name Pin No Pin N

Página 7 - Unit Note

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 Block Diagram A0~A12,BA0,BA1DQ0~DQ7/RAS/CAS/WE/CSCKE64M

Página 8

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Vo

Página 9

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 DC CHARACTERISTICS (Recommended operating condition unless

Página 10

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 AC OPERATING CONDITIONS Parameter Symbol Min Max Unit

Página 11 - Transcend Information Inc

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 AC Timing Parameters & Specifications (These AC charac

Página 12

TTTSSS666444MMMSSSDDD666444VVV666JJJ 200PIN DDR266 Unbuffered SO-DIMM512MB With 64Mx8 CL2.5 DQ & DM hold time to DQS tDH 0.5 ns DQ & DM

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