Transcend TS16MLD64V3G Ficha Técnica

Consulte online ou descarregue Ficha Técnica para Módulos de memória Transcend TS16MLD64V3G. Transcend 128MB DDR333 Unbuffer Non-ECC Memory Manual do Utilizador

  • Descarregar
  • Adicionar aos meus manuais
  • Imprimir
  • Página
    / 12
  • Índice
  • MARCADORES
  • Avaliado. / 5. Com base em avaliações de clientes
Vista de página 0
T
T
T
S
S
S
1
1
1
6
6
6
M
M
M
L
L
L
D
D
D
6
6
6
4
4
4
V
V
V
3
3
3
G
G
G
184PIN DDR333 Unbuffered DIMM
128MB With 16Mx16 CL2.5
Description
The TS16MLD64V3G is a 16M x 64bits Double Data
Rate SDRAM high-density for DDR333.The
TS16MLD64V3G consists of 4pcs CMOS 16Mx16 bits
Double Data Rate SDRAM in 66 pin TSOP-II 400mil
packages, and a 2048 bits serial EEPROM on a 200-pin
printed circuit board. The TS16MLD64V3G is a Dual
In-Line Memory Module and is intended for mounting into
184-pin edge connector sockets.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible
on both edges of DQS. Range of operation frequencies,
programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
Features
Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ±0.2V
Max clock Freq: 166MHZ.
Double-data-rate architecture; two data transfers per
clock cycle
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transition with CK transition
Auto and Self Refresh 7.8us refresh interval.
Data I/O transactions on both edge of data strobe.
Edge aligned data output, center aligned data input.
Serial Presence Detect (SPD) with serial EEPROM
SSTL-2 compatible inputs and outputs.
MRS cycle with address key programs.
CAS Latency (Access from column address): 2.5
Burst Length (2,4,8 )
Data Sequence (Sequential & Interleave)
Placement
E
I
A
B
D
H
G
F
C
PCB: 09-1852
Transcend Information Inc.
1
Vista de página 0
1 2 3 4 5 6 ... 11 12

Resumo do Conteúdo

Página 1

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 Description The TS16MLD64V3G is a 16M x 64bits Double Data

Página 2

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 SIMPLIFIED TRUTH TABLE (V=Valid, X=Don’t Care, H=Logic High

Página 3

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 Serial Presence Detect Specification Serial Presence Detect

Página 4 - Block Diagram

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 72 Manufacturing Location T 54 54 53 31 36 4D 4C44 36 34

Página 5

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 Dimensions Side Millimeters Inches A 133.35 ± 0.20 5.25

Página 6 - DC CHARACTERISTICS

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 Pinouts: Pin No Pin Name Pin No Pin NamePin No Pin Name

Página 7 - Unit Note

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 Block Diagram U3DQS5DM5LDQSLDMI/O 0I/O 1I/O 2I/O 3I/O 4I/O

Página 8

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Vol

Página 9

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 DC CHARACTERISTICS (Recommended operating condition unless

Página 10

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 AC OPERATING CONDITIONS Parameter Symbol Min Max Unit N

Página 11 - Transcend Information Inc

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 AC Timing Parameters & Specifications (These AC charact

Página 12

TTTSSS111666MMMLLLDDD666444VVV333GGG 184PIN DDR333 Unbuffered DIMM128MB With 16Mx16 CL2.5 DQ & DM setup time to DQS tDS 0.45 ns DQ & D

Comentários a estes Manuais

Sem comentários